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| CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2005.07.26 Page No. : 1/ 4 BTD1805I3 Description The device is manufactured in NPN planar technology by using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features * Very low collector-to-emitter saturation voltage * Fast switching speed * High current gain characteristic * Large current capability Applications * CCFL drivers * Voltage regulators * Relay drivers * High efficiency low voltage switching applications Symbol BTD1805I3 Outline TO-251 BBase CCollector EEmitter BCE BC BTD1805I3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @ TA=25 Power Dissipation @ TC=25 Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RJA RJC Tj Tstg Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2005.07.26 Page No. : 2/ 4 Limits 150 60 7 5 10 (Note 1) 2 1 15 125 8.33 150 -55~+150 Unit V V V A A W C/W C/W C C Note : 1. Single Pulse , Pw380s,Duty2%. Characteristics (Ta=25C) Symbol BVCBO *BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 *VBE(sat) *hFE 1 *hFE 2 *hFE 3 fT Cob ton tstg tf Min. 150 60 7 200 85 20 Typ. 200 240 0.9 150 50 50 1.35 120 Max. 0.1 0.1 50 300 400 600 1.2 400 Unit V V V A A mV mV mV mV V MHz pF ns s ns Test Conditions IC=100A, IE=0 IC=1mA, IB=0 IC=100A, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 IC=100mA, IB=5mA IC=2A, IB=50mA IC=3A, IB=150mA IC=5A, IB=200mA IC=2A, IB=100mA VCE=2V, IC=100mA VCE=2V, IC=5A VCE=2V, IC=10A VCE=10V, IC=50mA VCB=10V, f=1MHz VCC=30V, IC=10IB1=-10IB2=1A, RL=30 *Pulse Test : Pulse Width 380s, Duty Cycle2% BTD1805I3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 1000 Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2005.07.26 Page No. : 3/ 4 Saturation Voltage vs Collector Current VCE=2V Saturation Voltage---(mV) Current Gain---HFE 100 VCESAT@IC=40IB VCE=1V VCESAT@IC=20IB 100 1 10 100 1000 10000 Collector Current---IC(mA) 10 1 10 100 1000 10000 Collector Current---IC(mA) Saturation Voltage vs Collector Current 1000 1000 On Voltage vs Collector Current Saturation Voltage---(mV) VBESAT@IC=20IB On Voltage---(mV) VBEON@VCE=1V 100 1 10 100 1000 10000 Collector Current---IC(mA) 100 1 10 100 1000 10000 Collector Current---IC(mA) Power Derating Curve 1.2 Power Derating Curve 16 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature---TA() Power Dissipation---PD(W) 14 12 10 8 6 4 2 0 0 50 100 150 200 Case Temeprature---TC() BTD1805I3 CYStek Product Specification CYStech Electronics Corp. TO-251 Dimension A B C D Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2005.07.26 Page No. : 4/ 4 Marking: D1805 F 3 E K 2 1 J G I H Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 *: Typical DIM A B C D E F Inches Min. Max. 0.0177 0.0217 0.0354 0.0591 0.0177 0.0236 0.0866 0.0945 0.2520 0.2677 0.2677 0.2835 Millimeters Min. Max. 0.45 0.55 0.90 1.50 0.45 0.60 2.20 2.40 6.40 6.80 6.80 7.20 DIM G H I J K Inches Min. Max. 0.2559 *0.1811 0.0354 0.0315 0.2047 0.2165 Millimeters Min. Max. 6.50 *4.60 0.90 0.80 5.20 5.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD1805I3 CYStek Product Specification |
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